Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit

GaAs-GaAlAs HETEROJUNCTION TRANSISTOR FOR HIGH FREQUENCY OPERATION

A bipolar transistor structure is proposed having application for either high frequency operation or integration with certain types of light emitting devices. The structure involves liquid phase epitaxially grown layers of GaAs for the collector and base regions, and of Ga,_,Al,As for the heterojunction emitter. The high frequency potential of this device results primarily from the high electro...

High current gain transistor laser

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitt...

Integrated Software Suite Enables PC-based High-frequency Circuit Design

Ansoft Corporation recently acquired Compact Software. This new development offers a win-win relationship among Ansoft, Compact, and — most important — the microwave/wireless circuit design industry. Ansoft wins advanced linear and nonlinear circuit simulation; Compact wins enabling electromagnetic (EM) simulation technology; and the microwave industry wins a clear, viable and comprehensive sol...

Radio Frequency Integrated Circuit Design in Horizontal Current Bipolar Transistor Technology

The capabilities of Horizontal Current Bipolar Transistor (HCBT) technology for radio frequency (RF) integrated circuit (IC) design is analyzed. The HBCT, with its novel technological approach and integration with existing CMOS technologies, is entering the testing phase on IC level. The demanding RF integrated circuit requirements and design issues in the frequency range 0.9 – 5 GHz are presen...

A Monolithic Multi-Channel Data Acquisition Integrated Circuit